Development of Localized Plasma Etching System for Failure Analyses in Semiconductor Devices

Laser induced fluorescence monitoring of the etching processes with the inward plasma

“…We have recently developed a localized plasma etching apparatus using a novel phenomenon which we denominate "inward plasma" [1]. The etching chamber is filled with an etching gas and evacuated through a capillary tube (inner diameter 0.5 mme5 mm) whose entrance is close (<500 mm) to the sample surface.…”

Damage-free polymer surface modification employing inward-type plasma

“…[9][10][11] It has been reported that when the gas contained in the chamber is evacuated through the capillary tube, in which the gas is discharged, the microplasma can exit the capillary entrance, whereby semiconductor samples are plasma-etched. 12) Part of the generated plasma flows against the flow of the gas pumped out of the chamber and spreads out of the capillary entrance into the chamber. We named this novel plasma phenomenon "inward plasma".…”

“…The samples etched with inward plasma have been found to have less debris, along with a high etching rate and a low temperature rise. 12) In this work, surface modification of polymer surfaces is conducted using inward plasma. The distance between the capillary entrance and the sample was considered.…”