In this paper, the reliability of sense-switch p-channel flash is evaluated extensively. The endurance result indicates that the p-channel flash could be programmed and erased for more than 10 000 cycles; the room temperature read stress shows negligible influence on the p-channel flash cell; high temperature data retention at 150 °C is extrapolated to be about 5 years and 53 years corresponding to 30% and 40% degradation in the drive current, respectively. Moreover, the electrical parameters of the p-channel flash at different operation temperature are found to be less affected. All the results above indicate that the sense-switch p-channel flash is suitable to be used as the configuration cell in flash-based FPGA.

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In this paper, the combined effects of cycling endurance and radiation on floating gate memory cell are investigated in detail, the results indicate that: 1.The programmed flash cells with a prior appropriate number of program and erase cycling stress exhibit much smaller threshold voltage shift than their counterpart in response to radiation, which is mainly ascribed to the recombination of trapped electrons (introduced by cycling stress) and trapped holes (introduced by irradiation) in the oxide surrounding the floating gate; 2.The radiation induced transconductance degradation in prior cycled flash cell is more severe than those without cycling stress in both of the programmed state and erased state; 3. Radiation is more likely to induce interface generation in programmed state than in erased state. This paper will be useful in understanding the issues involved in cycling endurance and radiation effects as well as in designing radiation hardened floating gate memory cells.