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A low temperature high quality gate dielectric process for bottom gate organic thin film transistors (OTFT) is introduced which is compatible to plastic substrates. The Al 2 O 3 dielectric is grown from the aluminum gate electrode by anodic oxidation at room temperature and exhibits an exceptionally good electrical performance even for thin layers of 50 nm. Finding an electrolyte which significantly reduces dielectric charges was instrumental for the desired OTFT application. The electrolyte and substrate dependent behaviour was characterized and compared to different dielectrics to point out the advantages of anodic oxidized aluminum. The characteristics of pentacene bottom contact OTFTs realized with anodized Al 2 O 3 gate dielectric on glass and plastic substrates are presented.

Organic thin film transistors for display applications are investigated. Different dielectric materials – inorganic and organic – have been studied with respect to their electrical performance It was found that anodic oxidation is an excellent process to achieve smooth high-k dielectrics with high breakthrough field strength. With the proposed electrolyte electrical properties were further improved. The alignment of pentacene on different insulators as well as transistors characteristics is presented.