Controlled insertion of electronic states within the band gap of semiconductor nanocrystals (NCs) is a powerful tool for tuning their physical properties. One compelling example is II–VI NCs incorporating heterovalent coinage metals in which hole capture produces acceptor-bound excitons. To date, the opposite donor-bound exciton scheme has not been realized because of the unavailability of suitable donor dopants. Here, we produce a model system for donor-bound excitons in CdSeS NCs engineered with sulfur vacancies ( V S ) that introduce a donor state below the conduction band (CB), resulting in long-lived intragap luminescence. V S -localized electrons are almost unaffected by trapping, and suppression of thermal quenching boosts the emission efficiency to 85%. Magneto-optical measurements indicate that the V S are not magnetically coupled to the NC bands and that the polarization properties are determined by the spin of the valence-band photohole, whose spin flip is massively slowed down due to suppressed exchange interaction with the donor-localized electron.

Ultrafast plasmonics is driving growing interest for the search of novel plasmonic materials, overcoming the main limitations of noble metals. In this framework, titanium nitride (TiN) is brought in the spotlight for its refractory properties combined with an extremely fast electron‐lattice cooling time (<100 fs) compared to gold (≈ 1 ps). Despite the results reported in literature, a clear‐cut explanation of the origin of the ultrafast and giant optical response of TiN‐based materials upon excitation with femtosecond laser pulses is still missing. To address this issue, an original model is introduced, capable of unfolding the modulation of TiN optical properties on a broad bandwidth, starting from the variations of electronic and lattice temperatures following ultrafast photoexcitation. The numerical analysis is validated on ultrafast pump–probe spectroscopy experiments on a simple structure, a TiN film on glass. This approach enables a complete disentanglement of the interband and intraband contributions to the permittivity modulation. Moreover, it is also shown that, varying the synthesis conditions of the TiN film, not only the static, but also the dynamical optical response can be efficiently tuned. These findings pave the way for a breakthrough in the field: the design of TiN‐based ultrafast nanodevices for all‐optical modulation of light.

The optoelectronic features of 3-hydroxyflavone (3HF) self-assembled on the surface of a n-type semiconducting metal oxide (TiO2) and an insulator (Al2O3) are herein investigated. 3HF molecules exploit the coordinatively unsaturated...

We show the capability of plasmonic lenses for next-generation ultrafast electron sources. Using electromagnetic simulations, we design structures capable of femtosecond, nanoscale electron pulses. Plasmonic properties of template-stripped gold prototypes are characterized using cathodoluminescence spectromicroscopy.