The recent discovery of strong nonlinear emission in metallic nanostructures has offered possibilities for realization of functional nano photonic devices. Here, we demonstrate a novel design of a plasmonic nano device for high conversion efficiency of second harmonic generation. A 4 × 4 bowtie aperture array is fabricated to have both plasmonic resonance for local field enhancement of the fundamental wave and Fabry-Pérot resonance for high transmission of second harmonic wave. Combining nano structures for exciting surface plasmon polariton and suppressing higher order diffraction and anti-reflection layer, we achieve a second harmonic conversion efficiency of 1.4 × 10(-8) that is nearly an order of magnitude larger than the results published in recent literatures. We also theoretically analyze evidences of the role of double resonances tuned to the fundamental wave and the second harmonic wave, resulting in the augmentation of second harmonic response approximately an order of magnitude greater than that without the help of the resonance.

We propose a plasmonic data storage medium with a high-transmission metal aperture array embedded in a dielectric material. Bowtie apertures, having an outline of 80 nm and a ridge gap of 30 nm, are arranged in a two dimensional array with a bit pitch of 100 nm and a track pitch of 280 nm. Using the finite differential time domain (FDTD) method, we calculate the exposure power needed to record optical data, the contrast for readability of recorded data, and cross talk between the main track and adjacent tracks. Compared to a conventional blu-ray disc, the exposure power needed to record optical data in the proposed plasmonic data storage medium is less than a quarter of the conventional threshold power, and the density of the data storage is about 1.8 times larger.

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As the integration node becomes smaller in 193nm ArF immersion optical lithography, the complexity of optical proximity correction (OPC) has been increased continuously. Moreover, pattern design should be changed by more aggressive transformation technique such as inverse lithography technique (ILT). The greater fidelity to the target design on wafers is achieved by the application of these OPC techniques and results in the greater complexity level of the mask patterns. Complicated mask pattern consists of many corners and assist features, which raises the fraction of small shots in e-beam data. To get more accurate mask pattern, the dose stability of small shots becomes more important in a complicated mask pattern.In this paper, we present the evaluation results of the small shot handling capabilities of e-beam machines. According to the results, the information of small shots generated during data fracturing should be considered as a factor that defines the complexity of patterns in e-beam writing. It shows that the small shot printing in e-beam machines need to be improved in order to guarantee mask pattern quality.