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We report a significant enhancement in the thermoelectric figure-of-merit of phosphorous doped nanostructured n-type Si80Ge20 alloys, which were synthesized employing high energy ball milling followed by rapid-heating using spark plasma sintering. The rapid-heating rates, used in spark plasma sintering, allow the achievement of near-theoretical density in the sintered alloys, while retaining the nanostructural features introduced by ball-milling. The nanostructured alloys display a low thermal conductivity (2.3 W/mK) and a high value of Seebeck coefficient (−290 μV/K) resulting in a significant enhancement in ZT to about 1.5 at 900 °C, which is so far the highest reported value for n-type Si80Ge20 alloys.

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