The electrical and structural properties of poly (3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) thin films deposited from aqueous dispersion using different concentrations of selected secondary dopants are studied in detail. An improvement of the electrical conductivity by three orders of magnitude is achieved for dimethyl sulfoxide, sorbitol, ethylene glycol, and N,N-dimethylformamide, and the secondary dopant concentration dependence of the conductivity exhibits almost identical behavior for all investigated secondary dopants. Detailed analysis of the surface morphology and Raman spectra reveals no presence of the secondary dopant in fabricated films, and thus the dopants are truly causing the secondary doping effect. Although the ratio of benzenoid and quinoid vibrations in Raman spectra is unaffected by doping, the phase transition in PEDOT:PSS films owing to doping is confirmed. Further analysis of temperature-dependent conductivity reveals 1D variable range hopping (VRH) charge transport for undoped PEDOT:PSS, whereas highly conductive doped PEDOT:PSS films exhibit 3D VRH charge transport. We demonstrate that the charge-hopping dimensionality change should be a fundamental reason for the conductivity enhancement.

No abstract

No abstract

In this paper, the analysis of silicon oxynitride (SiON) films, deposited utilizing the plasma enhanced chemical vapor deposition (PECVD) process, for optical waveguides on silicon wafers is presented. The impact of N2O flow rate on various SiON film properties was investigated. The thickness and refractive index were measured by micro-spot spectroscopic reflectometry and confirmed by spectroscopic ellipsometry. The chemical composition of SiON films was analyzed using Secondary Ion Mass Spectrometry (SIMS). The surface roughness was analyzed using Atomic Force Microscopy (AFM). Increasing the N2O flow rate during deposition caused the deposition rate to increase and the refractive index to decrease. By changing the flow rate of gases into the chamber during the PECVD process, it is possible to precisely adjust the oxygen (O2) ratio and nitrogen (N2) ratio in the SiON film and thus control its optical properties. This was possibility utilized to fabricate SiON films suitable to serve as a waveguide core for optical waveguides with a low refractive index contrast.

The plasmonic resonance frequency of metal nanoparticles (NPs) strongly depend on the geometry, size, and separation between NPs. Here, a plasmonic structure is designed based on a film-coupled nanoparticle phenomenon and analytically investigated by a finite element method via COMSOL Multiphysics software tool. The optical behavior of the designed structure is studied and compared for two noble metals (gold and silver as a case study). Simulation results confirmed that structural elements such as dielectric layer thickness, metal film thickness, and metal nanoparticle separation distance significantly affect the plasmonic properties. Consequently, optimizing the dimensions of the mentioned structural elements results in a strong field enhancement in the dielectric gap layer. The simplicity of this structure, easy controlling of the dielectric gap layer thickness, strong field confinement in a limited area, and lack of incident light angle tunning are characteristic features of the proposed structure. Strong field enhancement in a limited volume makes this structure promising as plasmonic nanoantennas, SERS platforms, and sensing applications.