In organic hole-transporting material (HTM)-based p−i−n planar perovskite solar cells, which have simple and low-temperature processibility feasible to flexible devices, the incident light has to pass through the HTM before reaching the perovskite layer. Therefore, photo-excited state of organic HTM could become important during the solar cell operation, but this feature has not usually been considered for the HTM design. Here, we prove that enhancing their property at their photo-excited states, especially their transition dipole moments, can be a methodology to develop high efficiency p−i−n perovskite solar cells. The organic HTMs are designed to have high transition dipole moments at the excited states and simultaneously to preserve those property during the solar cell operation by their extended lifetimes through the excited-state intramolecular proton transfer process, consequently reducing the charge recombination and improving extraction properties of devices. Their UV-filtering ability is also beneficial to enhance the photostability of devices.

Gallium arsenide (GaAs) photovoltaic (PV) cells have been widely investigated due to their merits such as thin‐film feasibility, flexibility, and high efficiency. To further increase their performance, a wider bandgap PV structure such as indium gallium phosphide (InGaP) has been integrated in two‐terminal (2T) tandem configuration. However, it increases the overall fabrication cost, complicated tunnel‐junction diode connecting subcells are inevitable, and materials are limited by lattice matching. Here, high‐efficiency and stable wide‐bandgap perovskite PVs having comparable bandgap to InGaP (1.8–1.9 eV) are developed, which can be stable low‐cost add‐on layers to further enhance the performance of GaAs PVs as tandem configurations by showing an efficiency improvement from 21.68% to 24.27% (2T configuration) and 25.19% (4T configuration). This approach is also feasible for thin‐film GaAs PV, essential to reduce its fabrication cost for commercialization, with performance increasing from 21.85% to 24.32% and superior flexibility (1000 times bending) in a tandem configuration. Additionally, potential routes to over 30% stable perovskite/GaAs tandems, comparable to InGaP/GaAs with lower cost, are considered. This work can be an initial step to reach the objective of improving the usability of GaAs PV technology with enhanced performance for applications for which lightness and flexibility are crucial, without a significant additional cost increase.

See-through perovskite solar cells with high efficiency and iridescent colors are demonstrated by employing a multilayer dielectric mirror. A certain amount of visible light is used for wide color gamut semitransparent color generation, which can be easily tuned by changing an angle of incidence, and a wide range of visible light is efficiently reflected back toward a photoactive layer of the perovskite solar cells by the dielectric mirror for highly efficient light-harvesting performance, thus achieving 10.12% power conversion efficiency. We also rigorously examine how the number of pairs in the multilayer dielectric mirror affects optical properties of the colored semitransparent perovskite solar cells. The described approach can open the door to a large number of applications such as building-integrated photovoltaics, self-powered wearable electronics and power-generating color filters for energy-efficient display systems.

In article number 1903085, Jaejin Lee, Hui Joon Park, and co‐workers demonstrate perovskite/GaAs 2‐ and 4‐terminal tandem cells. High performance, stable, wide‐bandgap perovskite photovoltaics (PVs) (1.8–1.9 eV) are developed through a solvent‐controlled process. The tandem architecture is also feasible for a thin‐film flexible PV, which is essential to reduce its cost for commercialization with superior bendability. This approach is expected to improve the usability of GaAs PVs with enhanced efficiency and lower cost for applications where light‐weight and flexibility are critical.