Index Terms-Carrier injection, optical phase modulator, plasma dispersion effect, rib waveguides, silicon-on-insulator (SOI), silicon photonics.

Broadband Silicon-On-Insulator (SOI) directional couplers are designed based on a combination of curved and straight coupled waveguide sections. A design methodology based on the transfer matrix method (TMM) is used to determine the required coupler section lengths, radii, and waveguide cross-sections. A 50/50 power splitter with a measured bandwidth of 88 nm is designed and fabricated, with a device footprint of 20 μm × 3 μm. In addition, a balanced Mach-Zehnder interferometer is fabricated showing an extinction ratio of >16 dB over 100 nm of bandwidth.

In this work, we demonstrate via computer simulation the single mode and zero birefringence conditions for photonic wires with height and width less than 600 nm. We report on the simulation conditions for both single mode and zero birefringence in silicon-on-insulator photonic wires and sub-micron rib waveguides using a 3-dimensional imaginary beam propagation method. The results show that operation in both single mode and zero birefringence is possible under certain circumstances and that the conditions are restricted by fabrication processes where birefringence is strongly dependent upon waveguide dimensions. A matrix of waveguide parameters has been identified at both operating wavelengths of 1310 nm and 1550 nm, which can satisfy single mode and zero birefringence conditions simultaneously. This is to provide a general design rule for waveguides in small dimensions on the order of hundreds of nanometres.

Abstract-The fabrication restrictions that must be imposed on the geometry of optical waveguides to make them behave as single-mode devices are well known for relatively large waveguides, with shallow etch depth. However, the restrictions for small waveguides ( 1 m or less in cross section) are not well understood. Furthermore, it is usually a requirement that these waveguides are polarization independent, which further complicates the issues. This paper reports on the simulations of the conditions for both single-mode behavior and polarization independence, for small and deeply etched silicon-on-insulator (SOI) waveguides. The aim is to satisfy both conditions simultaneously. The results show that at larger waveguide widths, waveguide etch depth has little effect on the mode birefringence because the transverse-electric (TE) mode (horizontal-polarized mode) is well confined under the rib region. However, at smaller rib widths, the etch depth has a large influence on birefringence. An approximate equation relating the rib-waveguide width and etch depth to obtain polarization-independent operation is derived. It is possible to achieve single-mode operation at both polarizations while maintaining polarization independence for each of the waveguide heights used in this paper but may be difficult for other dimensions. For example, a 1-m SOI rib waveguide with an etch depth of 0.64 m and rib width of 0.52 m is predicted to exhibit such characteristics.