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The development of niobium oxide (Nb2O5) thin films is an important work as a result of wide applications of this oxide in the field of material science and thin-film applications. In this study, thin-film microstructures of aluminum (Al)-doped Nb2O5 were prepared by DC plasma sputtering on glasses substrate. The ratio of doping was (0.5, 1, and 1.5) wt. % Al. The obtained samples were thermally treated at 450 °C. Characterized and analyzed the physical properties by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), atomic force microscopy (AFM), and UV-Visible spectroscopy for optical properties investigation. Results showed that the average crystalline size of Nb2O5:0.5%Al film was found at 26.47 nm and the structure was a monoclinic phase for all samples. The distribution of grain size was found lower than 36.3 nm and uninformed particles on the surface. The analyzed optical properties showed the absorption decreased from 0.46 to 0.05 with increasing the wavelength and Low energy gap values decreased from 3.10 eV for Nb2O5 samples to 2.84 eV for 1.5%Al samples. In general, the doping by aluminum improved the physical properties of Nb2O5 films.

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The aim of this work is to prepare thin composite films from zirconia (ZrO2) and magnesia (MgO) on to glass basis by plasma of R.F. magnetron sputtering as well as recognize their structural and optical properties. It also aims to study the effect of thermal processing at 450 °C in two hours duration. The structural properties are measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The chemical analysis for the ready films had been studied using energy dispersive x-ray (EDX). The optical properties had been studied by using UV-Visible spectroscopy. Results show that the grain size of the ready films, which were thermally treated, was between 18.44 and 33.22 nm and the crystalline structure was a monoclinic phase with almost a spherical form for the grains. There was a homogenous distribution for all the ready films. The energy gaps decreased from 3.9 to 3.09 eV with an increase in the doping ratios.

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