No abstract

A compact dual band cross dipole antenna surrounded with metallic plates at five sides has been proposed in this article. comparative analysis has been done between the dipole and cross dipole antenna. On comparing these two antennas the proposed antenna has the high gain of 7db and radiation efficiency of 95 percent. The peak directivity of the proposed antenna is 5DB and its front to back ration is 60. The return loss, gain, radiation patterns and co polarization and cross polarization of the antenna has been observed and analysed using AN-soft HFSS v13.The proposed antenna works at the range of 0.6GHz to 1.5GHz which covers the applications like GSM, GNSS and some of the applications which covers in the range of UHF and VHF.

Semiconductor manufacturing, is dominated by the relentless demand for electronic products with greater performance, minimized dimensions, increased sophistication, and higher speed, all at reduced process cost. Logic device manufacturers need to satisfy this demand by producing integrated circuits that meet the predicted density increase encapsulated in Moore's law. This has led to the use of low-κ dielectrics. For memory devices, thinner wafers are used to enable close stacking of multiple dies in a single low-profile package. And in a third market segment, newer photonic devices are using novel materials such as GaAs, SiC, GaN and sapphire. Traditional mechanical methods are struggling to meet the singulation needs in all three of these device types. Yet at the same time, market realities dictate that the effective cost for increased processing power, novel photonic performance, and higher memory density all continue to fall. As a result, laser-based methods are being adopted in all three areas. In this overview paper, we examine the drivers for each of these market segments and see how laser technology is meeting the singulation demands of current and future devices.

No abstract

No abstract