A carbon-doped silicon oxide (CDO) finds use as a material with a low dielectric constant (k) for copper interconnects in multilayered integrated circuits (ICs).

Facile synthesis of NaCl type cubic SnAs with narrow dispersity and tunable nanocrystals using Sn(iv) iodide and aminoarsene as precursors in an alkylamine system at 250 °C.

A schematic diagram showing Cu/Ni NW based interconnects fabricated in a hybrid approach employing top-down and bottom-up methods.

Correction for ‘Facile synthesis of size-tunable tin arsenide nanocrystals’ by Venkatesham Tallapally et al., Chem. Commun., 2019, DOI: 10.1039/c8cc08101h.

One-dimensional (1D) nanomaterial self-assembly offers an excellent approach to the fabrication of highly complex nanodevices. Despite considerable effort and research, precisely controlling the orientation and positioning of nanowires (NWs) on a large-scale area and assembling into a functional device is still a state of the art problem. This thesis focuses on the dimensionally controlled copper nanowires (Cu NWs) synthesis, and magnetic field assisted self-assembly of cupronickel nanowires (Cu/Ni NWs) into interconnect structures on a carbon doped silicon dioxide (CDO) wafer. CDO is a low dielectric constant (k) material used for copper interconnects in multilayered complex integrated circuits (ICs). Here, a strong affinity of copper (Cu) and nickel (Ni) to thiol (-SH) functional groups were exploited to strongly adhere the nanowires (Cu/Ni NWs) onto the CDO substrate. Thiol (-SH) functionalization of the CDO surface was achieved via a series of reactions involving (1) esterification of the surface exposed ≡Si-OH functional group to its triflate (≡Si-O-Tf), (2) reduction of triflate to ≡Si-H using DIBAL-H, and (3) hydrosilylation of ≡Si-H using 2-propene thiol (≡Si-(CH2)3-SH) in a photochemical reaction. The thiol functionalization of CDO surface enhances the interaction of Cu/Ni NWs with strong chemical bonds. The same reaction scheme was also used in the functionalization of the hydrophilic (Si-OH) surface to the hydrophobic long alkyl chain derivatized (≡Si-CH2-(CH2)16-CH3) surface. This long alkyl chain modified surface acts as an excellent moisture resistant film, which helps to maintain the low-k value of the CDO.ii The dimensionally controlled Cu NWs were synthesized by a wet chemical approach. Optimization of the reducing agent, hydrazine (N2H4), controlled the surface morphology of nanowires (NWs). Interestingly, the high concentration of reducing agent produced particle decorated and/or with a rough NW surface, and conversely decreasing its concentration resulted in a comparatively thin, particle-free and smooth surface. The reaction temperature affected the aspect ratio (Length/Diameter) of the NWs. As the reaction temperature increased from 60 to 90 °C, the aspect ratio decreased from 140 to 21.Controlling the orientation of Cu NWs in a magnetic field was accomplished by coating them with a thin layer (~20 nm) of ferromagnetic nickel (Ni). This Ni-coated NWs showed an excellent degree of alignment (half-width ≈ 10 degrees) in the direction of an applied magnetic field over a large surface area at field strength as low as 2500 Gauss.Also, the Ni coating helped in protecting the copper core from oxidation resulting in better electrical wire-to-wire contacts. A nanowire-based interconnect channel was fabricated by combining magnetic field assisted alignment and deposition of aligned NWs on a thiol-modified and photolithography patterned CDO substrate. The NWs, deposited in the trenches, strongly bonded to the thiol-derivatized CDO substrate while an acetone wash removed loosely bound NWs on the photore...