Ab-intio computational treatment of electrochemical systems requires an appropriate treatment of the solid/liquid interfaces. A fully quantum mechanical treatment of the interface is computationally unfeasible due to the large number of degrees of freedom involved. In this work we describe a computationally efficient model where the electrode part of the interface is modeled at the density functional theory (DFT) level and the electrolyte part is represented through an implicit model based on the Poisson-Boltzmann equation. We describe the implementation of the model Vienna Ab-intio Simulation Package (VASP), a widely used DFT code, followed by validation and benchmarking of the implementation. To demonstrate the utility of the implicit electrolyte model we apply the model to study the effect of electrolyte and external voltage on the surface diffusion of sodium atoms on the electrode.PACS numbers: