This paper describes the techniques of Scanning Acoustic Microscope (SAM), parallel polishing and Focused Ion Beam (FIB) cross-sectioning used to detect and identify underfill defects in C4 flip chip packages.

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This paper presents a wideband low noise amplifier by using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 urn CMOS process for K-Band application. We use active diode to improve linearity, and improve TSMC inductor module by advanced design system momentum. The measurement results show that the input return loss is less than -8 dB, output return loss is less than -13.4 dB, the gain is 4.8 dB, the minimum noise figure is 4.1 dB, and the power consumption is 16.4 mW. The die area including pads is 0.75 mm 2 • Index Terms -Low Noise Amplifier, TSMC 0.18 um Process.