No abstract

No abstract

No abstract

This paper presents a wideband low noise amplifier by using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 urn CMOS process for K-Band application. We use active diode to improve linearity, and improve TSMC inductor module by advanced design system momentum. The measurement results show that the input return loss is less than -8 dB, output return loss is less than -13.4 dB, the gain is 4.8 dB, the minimum noise figure is 4.1 dB, and the power consumption is 16.4 mW. The die area including pads is 0.75 mm 2 • Index Terms -Low Noise Amplifier, TSMC 0.18 um Process.

The Low Noise Amplifier is implemented in TSMC 0.18 urn IP6M CMOS process . Circuit architecture of the first-stage uses the cascade stage to suppress Miller effect, the second-stage at the gate control of a group received more power, and then use voltage to control gain to achieve the advantages of savings in power consumption, amplifier measurement results shows the status of low-frequency. The gain is 5.1dB, noise figure is 7dB and the max control range is 4dB. Index Terms -LNA , Miller effect, Gain control Hyung-Joun Yoo, "A controllable variable gain LNA for 2 GHz low-noise amplifier in 0.18 urn CMOS technology". IEEE Microw.