In this paper a non-interferometric, non-iterative method for phase retrieval by Green's functions is presented. The theory is based on the parabolic wave equation that describes propagation of light in the Fresnel approximation in homogeneous media. Green's first identity will be used to derive an algorithm for phase retrieval considering different boundary conditions. Finally it will be shown that a commonly used solution of the transport-of-intensity equation can be obtained as a special case of the more general Green's function formulation derived here.

We present a simple method to determine the refractive indices of transparent specimens. The refractive index of an object under investigation is received by evaluating the optical path difference introduced by the object, while taking into account geometric parameters. The optical path difference that corresponds to the phase distribution is obtained by a noninterferometric, noniterative phase retrieval method based on Green's functions. It will be shown that this technique is a highly accurate and quantitative method for refractive index determination.

A two-layer resist system consisting of 3 nm titanium and 65 nm polymethylmethacrylate (PMMA) has been developed to expand the potential of mechanical atomic force microscope nanolithography. Approximately 20 nm wide structures have been grooved in an ultrathin Ti film. The realized Ti patterns were transferred into the PMMA bottom layer by an reactive ion etching (RIE) process in oxygen. Finally, 30 nm wide and 45 nm deep grooves, and arrays of holes with a period of 55 nm, which are 20–30 nm in diameter and 45 nm in depth, have been fabricated in silicon by a second RIE step in a SF6+O2 gas mixture.

The effects of illumination on the susceptibility of ferric borate are described, and the domain structures that occur in ferric borate are discussed. It is shown that the photo-induced changes agree with a simple domain wall model, the walls probably being of the Nee1 type. The time and temperature dependence of the photo-induced increases are consistent with a localized centre model in which the centres can exist in two energy states, each with a different anisotropy. The energy reqiiired to excite the centres is received indirectly from the photons, via Fe3+ ions.

To increase the operating temperature of a single electron circuit, it is necessary to reduce the capacitance of the tunnel junction. Usually this is done by reducing the linewidth of the capacitor forming metal stripes, which are sandwiched with an intermediate insulator. The use of alternative materials, however, allows capacitance reduction by means of thicker isolation layers or by a capacitor geometry different from a sandwich. The new SECO (step edge cut off) method, for the fabrication of single electron devices will be presented.