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The challenges associated with analyzing semiconductor defects become greater as the device design rule decreases. According to the SIA National Technology Roadmap for Semiconductors. the current metrology requirement for particle analysis is 90 nm with the need to analyze 75 nm particles by the year 2001. These dimensional requirements are beyond the typical capabilities of current SEM/EDX defect review tools. Auger Electron Spectroscopy is a powerful method for measuring the surface composition of localized regions, and has been identified in the SIA roadmap as a primary technique for particle analysis. The ability of a state-of-the-art Auger defect review tool (DRT) to provide secondary electron and high spatial resolution elemental images is particularly effective in characterizing the often complex structure of semiconductor defects. Examples of Auger analysis from defects found at various process steps, on both unpatterned and patterned whole wafers, are shown. These examples highlight the ability of Auger to analyze both thin and laterally small or complex defects.