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Phase-change random access memory (PRAM) is considered as one of the most promising candidates for future memories because of its good scalability and cost-effectiveness [1]. Besides implementations with standard interfaces like NOR flash or LPDDR2-NVM, application-oriented approaches using PRAM as main-memory or storage-class memory have been researched [2][3]. These studies suggest that noticeable merits can be achieved by using PRAM in improving power consumption, system cost, etc. However, relatively low chip density and insufficient write bandwidth of PRAMs are obstacles to better system performance. In this paper, we present an 8Gb PRAM with 40MB/s write bandwidth featuring 8Mb sub-array core architecture with 20nm diode-switched PRAM cells [4]. When an external high voltage is applied, the write bandwidth can be extended as high as 133MB/s.

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This study aimed to explore effects of static magnetic fields (SMFs) of moderate intensity (3-50 mT) as biophysical stimulators of proliferation and osteoblastic differentiation of human bone marrow-derived mesenchymal stem cells (MSCs). MSCs were exposed to SMFs of three intensities: 3, 15, and 50 mT. Proliferation was assessed by cell counting and bromodeoxyuridine incorporation, and differentiation by measuring alkaline phosphatase (ALP) activity, calcium content, mineralized nodule formation, and transcripts of osteogenic markers. Moderate intensity SMFs increased cell proliferation, ALP activity, calcium release, and mineralized nodule formation in a dose- and time-dependent manner, which peaked at 15 mT. In the same manner, they upregulated expression of osteogenic marker genes such as ALP, bone sialoprotein 2 (BSP2), collagen1a1 (COL1a1), osteocalcin (OCN), osteonectin (ON), osteopontin (OPN), osterix (OSX), and runt-related transcription factor 2 (RUNX2) with peak at 15 mT after 14 or 21 days of exposure. Results demonstrate that moderate intensity SMFs promote proliferation and osteoblastic differentiation of MSCs. This effect could help to improve MSC responses during osseointegration between a dental implant and surrounding bone.