We demonstrate the physical pictures of the localization of the conductive filaments (CFs) growth in flexible electrochemical metallization (ECM) memristors through an interfacial triggering (IT) into the polymer electrolyte. The IT sites (ITSs), capable of controlling the pathways of the CF growth, are formed at the electrode–polymer interfaces via the Ostwald ripening at low temperatures (below 230 °C). The injection and migration of metal ions and the resultant CF growth are found to be effectively controlled through the ITSs with the local electric field enhancement. The reliability, uniformity, and switching voltage of the device are much improved by the presence of the ITSs. Our flexible ECM memristor exhibits a high mechanical flexibility and a stable memory performance under repeated bending deformations.

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A microarray of conducting polymer electrodes with high resolution and high pattern-fidelity is developed on a stretchable substrate through the directed wetting localization (DWL) by the differential hydrophobicity. The large difference in the surface energy between the wetting and dewetting regions serves as the major determinant of the pattern resolution and the pattern-fidelity, yielding the full surface coverage in the stretchable electrode array (SEA) with 30 μm in width. The electrical characteristics of the SEA are well preserved under different types of elastic deformations. All-solution-processed polymer light-emitting diodes (except for the cathode) based on our patterned stretchable electrodes show no appreciable degradation of the performance under stretching. The DWL provides a simple and effective way of building up diverse stretchable electrical and optoelectronic devices in advanced wearable and bio-integrated electronics.

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