Transport measurements data are presented on bismuth-rich BiFeO3 ceramic, synthesized by a solid state method. Conductivity isotherms were analyzed using Jonscher’s empirical power-law frequency dependence. Monotonically increasing frequency-exponent n(T) over 413–593 K indicates a small polaron tunnelling mechanism for the charge transport. Distinct linear regimes observed in the Arrhenius σdc vs. T−1 plot suggest that two different charge-carriers/conductivity-relaxations prevail above and below ∼490 K. Twin Arrhenius regimes of ac-conductivity also exhibit a sharp “transition” at 510 K, from the pinned-dipole/hopping-anion dynamics to the free-dipole/oscillating-ions response at higher temperatures. Furthermore, a concurrent behavior-change of the locus traced out by the charge-hopping frequency ωh [with σ(ωh) = 2σdc] also designates 510 K as delineating two different transport characteristics in the adjacent temperature regimes.

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We report the design and development of a simple, electrically low powered and fast heating versatile electron beam annealing setup (up to 1000 °C) working with ultra high vacuum (UHV) chamber for annealing thin films and multilayer structures. The important features of the system are constant temperature control in UHV conditions for the temperature range from room temperature to 1000 ºC with sufficient power of 330 W, at constant vacuum during annealing treatment. It takes approximately 6 min to reach 1000 °C from room temperature (∼10(-6) mbar) and 45 min to cool down without any extra cooling. The annealing setup consists of a UHV chamber, sample holder, heating arrangement mounted on suitable UHV electrical feed-through and electronic control and feedback systems to control the temperature within ±1 ºC of set value. The outside of the vacuum chamber is cooled by cold air of 20 °C of air conditioning machine used for the laboratory, so that chamber temperature does not go beyond 50 °C when target temperature is maximum. The probability of surface oxidation or surface contamination during annealing is examined by means of x-ray photoelectron spectroscopy of virgin Cu sample annealed at 1000 °C.

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