With the rise of the Internet of Things (IoT), a huge market for so-called smart edge-devices is foreseen for millions of applications, like personalized healthcare and smart robotics. These devices have to bring smart computing directly where the data is generated, while coping with the limited energy budget. Conventional von-Neumann architecture fail to meet these requirements due to e.g., memory-processor data transfer bottleneck. Memristor-based computation-in-memory (CIM) has the potential to realize smart local computing for highly parallel data-dominated AI applications by exploiting the inherent properties of the architecture and the physical characteristics of the memristors. This paper provides a broad overview of CIM architecture highlighting its potential and unique properties in enabling smart local computing. Moreover, it discusses design considerations of such architectures including both crossbar array as well as peripheral circuits; special attention is given to analog-to-digital converter (ADC), as it is the most critical unit of analog-based CIM operation e.g., vector-matrix multiplication (VMM). Finally, the paper outlines the potential future directions for CIM-based edge smart computing.

Emerging memristor-based computing has the potential to achieve higher computational efficiency over conventional architectures. Bit-slicing scheme, which represents a single neural weight using multiple memristive devices, is usually introduced in memristor-based neural networks to meet high bitprecision demands. However, the accuracy of such networks can be significantly degraded due to non-zero minimum conductance (G min ) of memristive devices. This paper proposes an unbalanced bit-slicing scheme; it uses smaller slice sizes for more important bits to provide higher sensing margin and reduces the impact of non-zero G min . Moreover, the unbalanced bit-slicing is assisted by 2's complement arithmetic which further improves the accuracy. Simulation results show that our proposed scheme can achieve up to 8.8× and 1.8× accuracy compared to state-of-the-art for single-bit and two-bit configurations respectively, at reasonable energy overheads.

Computation-In-Memory (CIM) using memristor devices provides an energy-efficient hardware implementation of arithmetic and logic operations for numerous applications, such as neuromorphic computing and database query. However, memristor-based CIM suffers from various non-idealities such as conductance drift, read disturb, wire parasitics, endurance and device degradation. These negatively impact the computation accuracy of CIM. It is therefore essential to deal with these nonidealities and fabrication imperfections in order to harness the full potential of CIM. This paper discusses the non-ideality challenges and provides potential solutions. Furthermore, the paper outlines the potential future directions for CIM architectures.

Computation-in-memory (CIM) paradigm leverages emerging memory technologies such as resistive random access memories (RRAMs) to process the data within the memory itself. This alleviates the memory-processor bottleneck resulting in much higher hardware efficiency compared to von-Neumann architecture-based conventional hardware. Hence, CIM becomes an attractive alternative for applications like neural networks which require a huge number of data transfer operations in conventional hardware. CIM-based neural networks typically employ bit-slicing scheme which represents a single neural weight using multiple RRAM devices (called slices) to meet the high bit-precision demand. However, such neural networks suffer from significant accuracy degradation due to non-zero G min error where a zero weight in the neural network is represented by an RRAM device with a non-zero conductance. This paper proposes an unbalanced bit-slicing scheme to mitigate the impact of non-zero G min error. It achieves this by allocating appropriate sensing margins for different slices based on their binary positions. It also tunes the sensing margins to meet the demands of either high accuracy or energy-efficiency. The sensing margin allocation is supported by 2's complement arithmetic which further reduces the influence of non-zero G min error. Simulation results show that our proposed scheme achieves up to 7.3× accuracy and up to 7.8× correct operations per unit energy consumption compared to state-of-the-art.

Analog computation-in-memory (CIM) architecture alleviates massive data movement between the memory and the processor, thus promising great prospects to accelerate certain computational tasks in an energy-efficient manner. However, data converters involved in these architectures typically achieve the required computing accuracy at the expense of high area and energy footprint which can potentially determine CIM candidacy for low-power and compact edge-AI devices. In this work, we present a memory-periphery co-design to perform accurate A/D conversions of analog matrix-vector-multiplication (MVM) outputs. Here, we introduce a scheme where select-lines and bit-lines in the memory are virtually fixed to improve conversion accuracy and aid a ring-oscillator-based A/D conversion, equipped with component sharing and inter-matching of the reference blocks. In addition, we deploy a self-timed technique to further ensure high robustness addressing global design and cycle-to-cycle variations. Based on measurement results of a 4Kb CIM chip prototype equipped with TSMC 40nm, a relative accuracy of up to 99.71% is achieved with an energy efficiency of 115.1 TOPS/W and computational density of 12.1 TOPS/mm 2 for the MNIST dataset. Thus, an improvement of up to 11.3X and 7.5X compared to the state-of-the-art, respectively.