The 120Hz frame inversion driving FHD LCD TV panels were fabricated without image degradations seen such as the luminance gradient and the horizontal crosstalk. The panels had the higher aperture ratio because of the wider electrode space between the pixel and common electrode than conventional S-IPS. The novel driving method of gate-low-voltage-swing was used to remove the luminance gradient and the new panel design of divided-common-feeding was adopted to suppress the horizontal crosstalk. These technologies were very successful to achieve the high aperture ratio in the S-IPS panel without increase of the panel cost.

This paper presents a new 2D-3D switchable driving method for a 3D thin-film transistor liquid crystal display (TFT-LCD) TV. The proposed driving method, which uses a film-type patterned retarder (FPR), can reduce unnecessary power consumption while displaying 2D images. The proposed driving method can change a part of a pixel according to the driving mode; the part is operated as a black matrix in a 3D display mode, whereas in a 2D display mode, the part is operated as a normal pixel. To realize the proposed driving method without increasing the data signal rates, the number of gate driver integrated circuits (ICs), and the bezel size of the panel, a novel pixel structure and an integrated a-Si:H gate driver, which can be implemented in a small size, are developed. The power consumption of the proposed driving method measured at the full white gray level is 67 W in a 47-in full-high-definition (FHD) TFT-LCD TV. This result shows that the power consumption of the proposed driving method decreases by 28% compared with that of the conventional driving method in the 2D display mode.Index Terms-2D-3D switchable driving, 3D TV, film-type patterned retarder (FPR), integrated a-Si:H gate driver, power consumption.

The sticking image is a long standing but still not clearly solved problem in the display quality. It is more important criteria for the automotive displays. The factor analysis for the better understanding of sticking image was made in order to secure better display quality in the automotive application.

In case of using an a‐Si:H integrated gate driver for TFT‐LCD [1–4], it's important to define gate falling time exactly. Because an a‐Si:H integrated gate driver might degrade with bad environment easily, which result in gate signal delay or decreasing output signal. In other words, a little degradation of a‐Si:H gate driver affects the quality of picture. If a little degradation of a‐Si:H gate driver under special circumstance is inevitable, it's necessary to make a gate driver has so sufficient margin time within one horizontal time that cannot be interfered with next data signal. So, it's necessary to understand what factors affect the a‐Si:H integrated gate output signal. Especially, we focused an a effect of buffer transistor resistance for gate output signal. In our study, with a test a‐Si:H integrated gate driver pattern and simple simulation process, a relation a‐Si:H integrated buffer transistor resistance and gate output signal is analyzed.

Reliability of transistors is important to a-Si:H TFTs for integrated gate drivers. Because the life time of a-Si:H TFTs indicates the life time of LCD which adopts a-Si:H TFTs for integrated gate drivers on panel. With bias temperature stress, we could estimate the reliability of a-Si:H TFTs. Threshold voltage shift and decrease of on-current occurred by applying bias temperature stress. In this study, we investigated the effect of heat-treatment on reliability of a-Si:H TFTs for integrated gate drivers. With heat-treatment, the reliability of a-Si:H TFTs was improved and output signal of integrated gate dirivers was fine. This can be explained by that heat-treatment makes number of defect sites in channel reduce and cures the interface of active and gate insulator.