A 2D-3D Switchable Driving Method for Reducing Power Consumption of Thin-Film Transistor Liquid Crystal Display TV With Film-Type Patterned Retarder

Abstract

This paper presents a new 2D-3D switchable driving method for a 3D thin-film transistor liquid crystal display (TFT-LCD) TV. The proposed driving method, which uses a film-type patterned retarder (FPR), can reduce unnecessary power consumption while displaying 2D images. The proposed driving method can change a part of a pixel according to the driving mode; the part is operated as a black matrix in a 3D display mode, whereas in a 2D display mode, the part is operated as a normal pixel. To realize the proposed driving method without increasing the data signal rates, the number of gate driver integrated circuits (ICs), and the bezel size of the panel, a novel pixel structure and an integrated a-Si:H gate driver, which can be implemented in a small size, are developed. The power consumption of the proposed driving method measured at the full white gray level is 67 W in a 47-in full-high-definition (FHD) TFT-LCD TV. This result shows that the power consumption of the proposed driving method decreases by 28% compared with that of the conventional driving method in the 2D display mode.Index Terms-2D-3D switchable driving, 3D TV, film-type patterned retarder (FPR), integrated a-Si:H gate driver, power consumption.

A-Si TFT Integrated Gate Driver Workable at −40°C Using Bootstrapped Carry Signal

“…CK1 to CK4) are used with the duty ratio of 25%, and the high/low levels are VH/VL, respectively. Because of the reduced clock frequency, compared with conventional schemes, the proposed gate driver renders lower power consumption and shorter stress time due to the reduction of clock's duty ratio [7], [14].…”

“…On the other hand, the bootstrapping capacitor is connected to GN for conventional designs [3], [12], [14], and then the bootstrapping voltage of node Q can be expressed by…”

“…Up to date, hydrogenated amorphous silicon (a-Si:H) TFTs are still playing important roles in the flat panel display industry, thanks to the mature manufacturing process, low fabrication cost, and good electrical uniformity over large substrate area, [11]- [13]. However, the workable temperature range for a-Si:H TFT based gate driver is a critical issue as the speed and stability are seriously degraded at low and high temperature, respectively [14]- [15]. This is because there is conduction current decrease at lower temperature, while the threshold voltage shift with fast speed for long operation time at high temperature, [16]- [18].…”