A fully transparent non‐volatile memory thin‐film transistor (T‐MTFT) is demonstrated. The gate stack is composed of organic ferroelectric poly(vinylidene fluoride‐trifluoroethylene) [P(VDF‐TrFE)] and oxide semiconducting Al‐Zn‐Sn‐O (AZTO) layers, in which thin Al2O3 is introduced between two layers. All the fabrication processes are performed below 200 °C on the glass substrate. The transmittance of the fabricated device was more than 90% at the wavelength of 550 nm. The memory window obtained in the T‐MTFT was 7.5 V with a gate voltage sweep of −10 to 10 V, and it was still 1.8 V even with a lower voltage sweep of −6 to 6 V. The field‐effect mobility, subthreshold swing, on/off ratio, and gate leakage currents were obtained to be 32.2 cm2 V−1 s−1, 0.45 V decade−1, 108, and 10−13 A, respectively. All these characteristics correspond to the best performances among all types of non‐volatile memory transistors reported so far, although the programming speed and retention time should be more improved.

Bending characteristics of flexible oxide thin-film transistors could be enhanced by optimizing the barrier layers on the polyethylene naphthalate substrate.

Biological synaptic behaviors such as short-/long-term plasticity were implemented by ferroelectric polarization switching dynamics of Al-doped HfO₂ ferroelectric gate insulators.