Ga doping in indium zinc oxide (IZO)‐based amorphous‐oxide semiconductors (AOSs) promotes the formation of oxide‐lattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin‐film‐transistor performance (see figure). The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is clarified, as required for solution‐processed, low‐temperature‐annealed AOSs.

With the aim of preparing a high performance conductive ink, we sought to control the surface chemistry of Cu nanoparticles so as to minimize surface oxidation. Specifically, the surface oxide layer on Cu nanoparticles synthesized in ambient atmosphere was minimized by adjusting the molecular weight of poly(N‐vinylpyrrolidone) capping molecules, as confirmed by high resolution transmission electron microscopy and X‐ray photoelectron spectroscopy analyses. In addition, we demonstrate that by minimizing the thickness of the surface oxide layer, Cu granular films with good conductivity could be obtained by sintering nanoparticle assembles. Finally, we fabricated highly conductive Cu patterns on a plastic substrate by ink‐jet printing.

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