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Extreme ultraviolet lithography (EUVL) is one of the most leading lithography technologies for high volume manufacturing. The EUVL is based on reflective optic system therefore critical patterning issues are arisen from the surface of photomask. Defects below and inside of the multilayer or absorber of EUV photomask is one of the most critical issues to implement EUV lithography in mass production. It is very important to pick out and repair printable mask defects. Unfortunately, however, infrastructure for securing the defect free photomask such as inspection tool is still under development furthermore it does not seem to be ready soon.In order to overcome the lack of infrastructures for EUV mask inspection, we will discuss an alternative methodology which is based on wafer inspection results using DBM (Design Based Metrology) tool. It is very challenging for metrology to quantify real mask defect from wafer inspection result since various sources are possible contributor. One of them is random defect comes from poor CD uniformity. It is probable that those random defects are majority of a defect list including real mask defects. It is obvious that CD uniformity should be considered to pick out only a real mask defect. In this paper, the methodology to determine real mask defect from the wafer inspection results will be discussed. Experiments are carried out on contact layer and on metal layer using mask defect inspection tool, Teron(KLA6xx) and DBM (Design Based Metrology) tool, NGR2170™. 45 32 22 16 DRAM Pi pitch (nm) (contacted) 36 32 28 25 23 MPU /ASIC Metal l f/2 pitch pon) 38 32 27 21 193nm Imm 193 nm DP EUV 193nm MP ML2 (MPU) Imprint (DRAM) EUV 193nm MP ML2 Imprint DSA + litho platform EUV / EUV + MP EUV (6.Xnm) ML2 Imprint Litho + DSA Innovation

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