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The growth of InGaN by Ga-migration-enhanced epitaxy using metalorganic chemical vapor deposition is reported. Trench defects, which are usually associated with the generation of basal-plane stacking faults (BSFs), can be significantly diminished by this method. The surface morphology and luminescence characteristics of the deposited InGaN are consequently improved. It is demonstrated that the Ga-migration-enhanced epitaxy can inhibit the generation of BSFs and thus prevent the formation of trench defects in InGaN epilayers.

Optoelectronic devices, especially III-nitride quantum-structure devices, are suffering from a serise of material problems, such as polarization induced quantum efficiency drooping and lack of suitable p-type dopant. Herein, dopant-free polarization-induced...

With the emergence of new applications such as underwater optical communication, the demand for photodetectors with high responsivity, high speed and wavelength selectivity is growing. These performances require gain-type photodetectors...

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