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In this work, the effects of the frequency dependence of transparent dielectric based on Spin-on Glass (SOG) under electrical stress is presented. The SOG thin films were cured at 200 °C in ambient air. The capacitance-voltage and capacitance-frequency characteristics were measured in Metal-Oxide-Semiconductor (MOS) capacitors using the SOG thin film. In addition, electrical stress is applied to the MOS capacitors at different voltage values and during a long period of time. The results show, depending on the bias stress applied, a reversible interface charge contribution and an irreversible charge induced by interface states probably generated by the degradation of the film.