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Hall measurements performed on a p-type layer on an n-type substrate showed n-type characteristics at room temperature, p-type behavior at low temperature, and a singularity at intermediate temperatures. The results can be explained by considering the contribution to the Hall readings from the n-type substrate, which is made possible by leakage through the p–n junction. A theoretical description has been developed to understand Hall coefficients in bilayer structures with opposite carrier types.

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