With
a combination of outstanding properties and a wide spectrum
of applications, graphene has emerged as a significant nanomaterial.
However, to realize its full potential for practical applications,
a number of obstacles have to be overcome, such as low-temperature,
transfer-free growth on desired substrates. In most of the reports,
direct graphene growth is confined to either a small area or high
sheet resistance. Here, an attempt has been made to grow large-area
graphene directly on insulating substrates, such as quartz and glass,
using magnetron-generated microwave plasma chemical vapor deposition
at a substrate temperature of 300 °C with a sheet resistance
of 1.3k Ω/□ and transmittance of 80%. Graphene is characterized
using Raman microscopy, atomic force microscopy, scanning electron
microscopy, optical imaging, UV–vis spectroscopy, and X-ray
photoelectron spectroscopy. Four-probe resistivity and Hall effect
measurements were performed to investigate electronic properties.
Key to this report is the use of 0.3 sccm CO
2
during growth
to put a control over vertical graphene growth, generally forming
carbon walls, and 15–20 min of O
3
treatment on as-synthesized
graphene to improve sheet carrier mobility and transmittance. This
report can be helpful in growing large-area graphene directly on insulating
transparent substrates at low temperatures with advanced electronic
properties for applications in transparent conducting electrodes and
optoelectronics.
As a thermoelectric (TE) material suited to applications for recycling waste-heat into electricity through the Seebeck effect, poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonic acid) (PEDOT:PSS) is of great interest.
The non-resonant microwave absorption (NRMA) measurements have been intensively performed for superconducting thin films of YBa 2 Cu 3 O y fabricated on MgO (100) substrates and powder samples of LaSrCuO systems. In order to complement the study, we also review the NRMA of BiSrCaCuO system. A particular attention has been paid to the following phenomena: (i) phases, (ii) effect of current, (iii) directional effect of applied magnetic field, (iv) hysteresis, (v) microwave power absorbed as a function of magnetic field, (vi) linewidth in the vicinity of T c , and (vii) modulation amplitude effect. A preliminary study on ( La 0.98 Dy 0.02)1.85 Sr 0.15 CuO 4 was also reported.
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