The electrical resistivity of near-stoichiometric crystalline V2O5 has been measured as a function of crystal orientation and oxygen partial pressure from 25° to 300°C. Conductivity is insensitive to ambient atmosphere. The activation energy for conduction is 0.20 eV. Molten V2O5, however, is sensitive to oxygen partial pressure. Its conductivity is proportional to Po2−⅙. Anomalously high electrical resistivity was observed for glassy V2O5 films.

Apparatus for measuring the Seebeck coefficients of highly resistive organic semiconducting materials Rev. Sci. Instrum. 84, 044703 (2013); 10.1063/1.4799968 Apparatus for measuring Seebeck coefficients of highresistance semiconducting films Rev. Sci. Instrum. 55, 754 (1984); 10.1063/1.1137812 Conduction models of semiconducting calcium borate glasses containing iron oxideThe Seebeck coefficient, el, of semiconducting glasses based on vanadium pentoxide can be calculated from a knowledge of the concentration ratio of the high and low valence ions. The concentration of vanadium ions in the glass and long-range order apparently have no effect on el. Semiconducting glasses based on iron oxide, however, are not amenable to the simple treatment presently developed.The effect of nuclear magnetic double resonance on an AB+C system, in which A is in chemical exchange with C, is discussed. A strong irradiation at C causes the spin states of A to saturate, while the splitting of B by A is not influenced. When the chemical shift between A and B (V05AB) is comparable to their coupling constant ( JAB) , the indirect spin saturation of A may in turn cause B to saturate via spin-spin interaction. An expression for the ratio of intensity of the AB system after and before irradiating C is obtained in terms of V05AB, JAB, and factors accounting for the rate of exchange and relaxation time.