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Si3N4 removal rapidly destroys the oxidation barrier, a method which incorporates an additional, short wet oxidation step between isolation and gate oxidations is described and recommended for selective oxidation processing. AcknowledgmentsWe are indebted to H. J. Levinstein and S. P. Murarka for many interesting and helpful discussions regarding this work. ABSTRACTFactors which influence the accuracy and reproducibility of semiconductor carrier concentration profiling via capacitance-voltage measurements and dissolution at an electrolytic Schottky barrier are critically examined. Attention is centered upon the capacitance contributions from the edge regions of the electrolyte contact area. It is shown that several properties of the electrolyte, and the measurement frequency, as well as the physical means of electrolyte confinement have an important influence. In particular, a suitable combination of electrolyte conductivity, wetting, and dissolution behavior can be met by 0.1M Tiron, for the profiling of GaAs using the "Post Office Profile Plotter." Examples are given which demonstrate the high degree of reproducibility, both short-and long-term, attainable for the profiling of "hi-lo" structures. Optimization of the approach for other semiconductor materials, for Which an "ideal" electrolyte may not be available, is also discussed. 1 Present address: Intelsat, Washington, D. C. 20024. ~The Post Office Profile Plotter is manufactured by Polaron Limited, Watford WD1 8XG, Herts, England. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.174.254.159 Downloaded on 2015-05-25 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.174.254.159 Downloaded on 2015-05-25 to IP

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