We report the observation of strong electron dephasing in a series of disordered Cu93Ge4Au3 thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with further decrease in temperature below 4 K, is found. The upturn is progressively more pronounced in more disordered samples. Moreover, a lnT-dependent, but high-magnetic-field-insensitive, resistance rise persisting from above 10 K down to 30 mK is observed in the films. These results suggest a nonmagnetic dephasing process which is stronger than any known mechanism and may originate from the coupling of conduction electrons to dynamic defects.

Ever since the first discoveries of the quantum-interference transport in mesoscopic systems, the electron dephasing times, $\tau_\phi$, in the concentrated AuPd alloys have been extensively measured. The samples were made from different sources with different compositions, prepared by different deposition methods, and various geometries (1D narrow wires, 2D thin films, and 3D thickfilms) were studied. Surprisingly, the low-temperature behavior of $\tau_\phi$ inferred by different groups over two decades reveals a systematic correlation with the level of disorder of the sample. At low temperatures, where $\tau_\phi$ is (nearly) independent of temperature, a scaling $\tau_\phi^{\rm max} \propto D^{-\alpha}$ is found, where $tau_\phi^{\rm max}$ is the maximum value of $\tau_\phi$ measured in the experiment, $D$ is the electron diffusion constant, and the exponent $\alpha$ is close to or slightly larger than 1. We address this nontrivial scaling behavior and suggest that the most possible origin for this unusual dephasing is due to dynamical structure defects, while other theoretical explanations may not be totally ruled out.Comment: to appear in Physica E, Proceedings for the International Seminar and Workshop "Quantum Coherence, Noise, and Decoherence in Nanostructures", 15-26 May 2006, Dresde

We have made a series of thick Sc films doped with different amounts of Ag, which results in a systematic decrease in the resistivities, i.e., disorder, of the films. From measurements of the low-field magnetoresistances and comparison with three-dimensional weak-localization theoretical predictions, the electron dephasing times are extracted in every film. We find a crossover of the inelastic electron process from the critical electronelectron scattering to the electron-phonon scattering as the disorder decreases and the system progressively moves away from the Anderson localization.