Hall measurements are performed to survey electrical properties of p-Pb1−xMnxSe (x≈0.04) films grown by molecular beam epitaxy technique. It is indicated that these films are approaching the metal-insulator transition from the metallic side. Weak localization effect was observed up to about 50 K. The deduced phase-breaking time τϕ on temperature is interpreted according to the concept of the electron–electron scattering in highly disordered bulk conductors.