The transport current properties of Ag-sheathed (Bi, Pb) 2 Sr 2 Ca 2 Cu 3 O y BSCCO-2223 superconducting tapes were analysed as a function of cooling rate. Changing the cooling rate showed a pronounced effect on the transport current of the superconductor heat-treated at 810 • C in a 7% O 2 atmosphere. Results indicated that, during fast cooling, the thin layer of BSCCO adjacent to the Ag sheath is under compression. The compressive stress causes microcracking and affects the alignment and interconnectivity of 2223 grains in the thin layer of BSCCO next to the silver sheath. This changes the current path through the high-critical-current-density region in the superconductor. A comparison between furnace-cooled tapes and slowly cooled tapes (10 • C h −1 to 780 • C and then 1 • C min −1 to room temperature) showed that the latter attained two or three times higher I c values. Based on this observation, a cooling schedule that includes several intermediate cooling steps is suggested. The effect of the lattice parameter on T c was investigated. Behaviour analogous to that of the 2212 phase was found, T c was affected by changes in the c-axis of the 2223 phase. However, the effect was not as pronounced as it was in the 2212 phase.

Controlled chemical polymerization of tantalum ethoxide in the presence of glacial acetic acid (HOAc/Alk. = 16) and solubilized lithium acetate (Li/Ta = 1.00, H2O/Alk. = 55.55) was used for the preparation of an amorphous gel precursor to LiTaO3. Although additional investigations are required, the results suggest that successful formation of amorphous gel network, as opposed to that of colloidal tantalum (hydrous) oxide, may be due to the generation of a new organotantalum precursor via a structural modification reaction between the tantalum ethoxide and glacial acetic acid. The evolution of LiTaO3 ceramics from pre-ceramic gels was investigated using thermal analysis, electron microscopy, and x-ray diffraction. The results indicate that after the completion of gel pyrolysis (200–400 °C) and crystallization (Tc = 590 °C), ultrafine (average particle size 100–300 nm), single phase, crystalline (a = 5.243, c = 13.812 Å) LiTaO3 powders can be prepared at low processing temperatures.

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Low-k dielectric films have been developed using a new silsesquioxane based chemistry that allows both the electrical and mechanical properties to be tuned to specific values. By controlling the composition and film processing conditions of spin-on formulations, dielectric constants in the range 1.5 to 3.0 are obtained with modulus values that range from 1 to 30 GPa. The modulus and dielectric constant are tuned by controlling porosity, which varies from 0 to >60%, and final film composition which varies from HSiO3/2 to SiO4/2. The spin-on formulation includes hydrogen silsesquioxane resin and solvents. Adjusting the ratio of solvents to resin in the spin-on formulation controls porosity. As-spun films are treated with ammonia and moisture to oxidize the resin and form a mechanically self-supporting gel. Solvent removal and further conversion to a more “silica-like” composition occur during thermal curing at temperatures of 400 to 450°C. The final film composition was controlled through both room temperature oxidation and thermal processing. Final film properties are optimized for a balance of electrical, mechanical and thermal properties to meet the specific requirements of a wide range of applications. Processed films exhibit no stress corrosion cracking or delamination upon indentation, with indenter penetration exceeding the film thickness, and followed by exposure to water at room temperature. Films also exhibit high adhesive strength (> 60MPa) and low moisture absorption. Processing conditions, composition and properties of thin are discussed.