The effect of cooling field HFC on the exchange bias field HEB in a spontaneous lamellar ferromagnetic/antiferromagnetic phase separated Y0.2Ca0.8MnO3 has been studied. It is found that with increasing HFC from 1to6T the value of HEB decreases by 37% at 2K and is inversely proportional to the ferromagnetic layer thickness tFM. This suggests that the tuning of HEB by HFC in Y0.2Ca0.8MnO3 arises from the variation of tFM with HFC. This phenomenon is essentially different from other types of magnetic tunings.

The dislocation multiplication and movement mechanism in GaN single crystals has been studied using nanoindentation and cathodoluminescence. Dislocation loops can multiply and move from plane to plane by cross-slip, thus producing a wide plastic deformation in GaN during indentation. This mechanism is further supported by the remarkable movement of indentation induced dislocations during annealing. Furthermore, the so-called pop-in events, in which the indenter suddenly enters deeper into the material without the application of any additional force, can be better understood by considering the cross-slip mechanism.

No abstract