Cerium-activated phosphors are characterized by their fast luminescence decay. Gadolinium orthosilicate (Gd2SiO5) is a material possessing a high atomic number, and can also play host to the cerium activator. Cerium-doped Gd2SiO5 single crystals were grown by the Czochralski technique, and their luminescence properties were examined. The light output was 1.3 times larger than that of the best Bi4Ge3O12, and the decay constant was 60 ns at room temperature.

Scintillation characteristics of the Czochralski-grown ZnWO4 single crystal were studied. This crystal, with light red-brown color, exhibits a maximum luminescence wavelength of 480 nm under excitation at 254 nm. The total luminescence output under x-ray excitation at 254 nm. The total luminescence output under x-ray excitation was found to be 2.3 times larger than that of the best Bi4Ge3O12 at room temperature with small afterglow.

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A planar-type junction of HoBa2Cu3O7−x−La1.5Ba1.5Cu3O7−y −HoBa2Cu3O7−x having an electrode spacing as small as 0.1 μm is fabricated and its electrical characteristics are measured. Supercurrent through the La1.5Ba1.5Cu3O7−y layer is detected up to the temperature of 69 K. A superconducting region extends from the YBa2Cu3O7−x electrodes into a normal La1.5Ba1.5Cu3O7−y layer with a submicrometer scale. The superconducting decay length is 65 nm, which is two orders of magnitude larger than the value calculated from the conventional proximity theory.

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