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A Scanning Near-field Photon Emission Microscope (SNPEM) for monitoring photon emission sites with a spatial resolution of between 50 to 200 nm is described. A protrusion type probe with a base diameter larger than a wavelength is proposed as a good compromise between resolution and sensitivity. Photon emissions from silicon pn junction and n-MOSFET have been detected with resolution clearly better than the far-field PEM (FFPEM). Features in photon emission distribution smaller than 200 nm were revealed in spite the fact that metal lines prevented the SNPEM probe to reach near-field condition with an actual emission source.

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A setup is described which allows investigations of electric the electric field and generate the EBIC-signal. As already field distributions in the top layers of a dynamically driven power described in [4] this current can be related to the electric field device by means of time-resolved Electron Beam Induced strength at the corresponding place of charge-carrier Currents (EBIC). Functionality of the field termination generation. structures, e.g. guard rings can be visualized under transient bias gnrtin.'~~~~~~~~~~~~Switching of the diode iS periodically repeated by a conditions. Reverse and forward recovery of an 800-V diode was standard electrical circuit, which is usually used for reverse investigated by this technique and the obtained results were compared to EBIC-maps recorded on a statically biased device, recovery characterization. To obtain time-resolved information of the electric field distribution, the electron beam

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