The effect of boron ion implantation at dose of 1.25 × 1012 cm−2 and implantation energies varying from 30 to 100 keV as well as of isochronous annealing on the energy spectrum of shallow traps in SiSiO2 structures is investigated. Parameters of levels are determined by the method of thermally stimulated charge release at cryogenic temperatures (T < 20 K). A set of shallow levels in the range of 0.013 to 0.062 eV from the conduction band edge is observed. It is shown that an isochronous annealing of structures implanted with boron ions at different implantation energies does not affect the energy spectrum of the shallow traps but has an influence mainly on the relation between their densities. A model which explain the obtained experimental dependences is proposed.