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Spectra of thermally stimulated charge release (TSCR) in SiSiO2 structures are investigated in the temperature range from 5 to 30 K under conditions of different polarities of the voltage applied. A set of levels in the range from 0.013 to 0.062 eV and from 0.036 to 0.071 eV is observed in the case of n‐type and p‐type silicon substrates, respectively. Effects of magnetic field and laser beam irradiation on TSCR spectra is studied. The TSCR. spectra observed are explained by recharging of traps located in the transitional region between SiO2 and Si. Such a recharging is assumed to be assisted by the effect of localized phonons.

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The effect of boron ion implantation at dose of 1.25 × 1012 cm−2 and implantation energies varying from 30 to 100 keV as well as of isochronous annealing on the energy spectrum of shallow traps in SiSiO2 structures is investigated. Parameters of levels are determined by the method of thermally stimulated charge release at cryogenic temperatures (T < 20 K). A set of shallow levels in the range of 0.013 to 0.062 eV from the conduction band edge is observed. It is shown that an isochronous annealing of structures implanted with boron ions at different implantation energies does not affect the energy spectrum of the shallow traps but has an influence mainly on the relation between their densities. A model which explain the obtained experimental dependences is proposed.

Wide-band semiconductor based on the alkali-earth metals and doped with the rare-earth ions are sensitive to the laser irradiation in the blue spectral range. An alkali-earth sulphides doped with the rare-earth ions could be used as recording reversible media for data storage.Keywords : e 1 ectron t rapp ing mat er i al s , opt i cal data storage, alkal 1-earth sulphides.nescence (OSL) emission. O-8194-1873-O/95/$6.OO SP1E Vol. 2514 /285 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/23/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx