The performances of two different interconnection techniques for coplanar MMICs, wire bonding and flip chip, are investigated at millimeter-wave frequencies. By developing an accurate model for the interconnections, which is validated with experimental data up to 120 GHz, the limitations with respect to frequency and interconnection distance of either technique are pointed out, yielding useful data for the design of hybrid MMW-subsystems

The impact of the packaging configuration on cross talk and feed back effects caused by parasitic substrate modes is investigated for coplanar millimeter-wave circuits. It is demonstrated theoretically and by means of several circuit examples that both the mounting configuration and the thickness of the semiconductor substrate of coplanar MMICs have to be chosen appropriately, in order to avoid circuit degradation or even failure

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The electrical properties of uniform coplanar lines on GaAs have been investigated, using a finite element simulator. Experimental results. extracted from on-wafer measurements to 120 GHz, are in good agreement with the simulated results. Frequency dependent models were developed for all characteristic parameters of the coplanar lines, such as impedance, effective relative dielectric constant and attenuation, describing the behavior of coplanar lines of different geometries over the entire frequency range from 0-120 GHz. Similarly, exact models applicable over the am frequency range have been developed for a number of coplanar elements, such as air bridges, 90 degree corners and probing pads. These models have been implemented in our HP-MDS data base, resulting in accurate designs of a number of millimeter wave circuits