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High power Ku-band internally matched GaAs FETs have been developed using multi-chip power combiner/divider technology. An output power of 43.2 dBm at 1 dJ3 gain compression with 6.9 dB gain and 29.5 % power-addec-efficiency has been obtained at 14 GHz. This state-of-the-art performance has been achieved by (1) optimizing the carrier concentration profiles of the active layer and making the buffer layer resistivity higher, (2) adopting the double-recess structure to get the higher breakdown voltage and (3) designing the high efficiency power combiner/divider circuits.

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