Low noise AlGaAs/GaAs HEMT with 0.1 pm gate length have been successfully developed.A state-of-the-art low noise figure of 0.51 dB and 1.9 dB are obtained at 18 GHz and 40 GHz at room temperature, with an associated gain of lO.8dB and 5.3dB.respectively.The performance has been achieved by shortening the gate length to 0.1 p m and also by lowering the gate resistance drastically with a T shaped gate structure.
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