Super low noise AlGaAs/GaAs HEMT with one tenth micron gate

Kawasaki, H.; Shino, T.; Kawano, M.; Kamei, K.

doi:10.1109/mwsym.1989.38756

Cited by 16 publications

(3 citation statements)

References 3 publications

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“…This indicates that AlGaN/GaN HEMTs on SiC have better robustness on microwave noise performance. Though the robustness of the device on the sapphire substrate is not as good as that of devices on SiC, it still exhibited an of 2.14 dB and a of 7.56 dB at V. These noise performances of our AlGaN/GaN HEMTs are comparable with those of GaAs-based HEMTs [12] and MESFETs [13], but with much better robustness since these devices can be biased at high biases and still exhibited respectable noise figures. Fig.…”

Section: Microwave Noise Characteristicsmentioning

confidence: 67%

DC, RF, and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates

Kumar

Schwindt

et al. 2002

IEEE Trans. Microwave Theory Techn.

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High-performance AlGaN/GaN high electron-mobility transistors with 0.18m gate length have been fabricated on a sapphire substrate. The devices exhibited an extrinsic transconductance of 212 mS/mm, a unity current gain cutoff frequency () of 101 GHz, and a maximum oscillation frequency (MAX) of 140 GHz. At ds = 4 V and ds = 39 4 mA/mm, the devices exhibited a minimum noise figure (NF min) of 0.48 dB and an associated gain () of 11.16 dB at 12 GHz. Also, at a fixed drain bias of 4 V with the drain current swept, the lowest NF min of 0.48 dB at 12 GHz was obtained at ds = 40 mA/mm, and a peak of 11.71 dB at 12 GHz was obtained at ds = 60 mA/mm. With the drain current held at 40 mA/mm and drain bias swept, the NF min increased almost linearly with the increase of drain bias. Meanwhile, the values decreased linearly with the increase of drain bias. At a fixed bias condition (ds = 4 V and ds = 40 mA/mm), the NF min values at 12 GHz increased from 0.32 dB at 55 C to 2.78 dB at 200 C. To our knowledge, these data represent the highest and MAX , and the best microwave noise performance of any GaN-based FETs on sapphire substrates ever reported.

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Section: Microwave Noise Characteristicsmentioning

confidence: 67%

DC, RF, and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates

Kumar

Schwindt

et al. 2002

IEEE Trans. Microwave Theory Techn.

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show abstract

“…The modeled noise resistance, though, was not correct, as it was from 0.2 to 0.5 over the measured value. Typical drain current noise was 5 10 A Hz and gate current noise of 7 10 A Hz. Comparing both, one sees that both work well at predicting the and optimum source reflection-coefficient magnitude.…”

Section: Modelingmentioning

confidence: 99%

Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs

Sanabria

Palacios

et al. 2005

IEEE Trans. Microwave Theory Techn.

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“…This has led to the investigation of ultrathin gate fabrication for FETs. 1,2 One of the most important and fundamental technologies for fabricating integrated circuits ͑ICs͒ is 100 nm class gate-pattern formation with WSiN, which has high electric and heat tolerance. [3][4][5][6] We have investigated the etching characteristics of WSiN gates by using an electroncyclotron-resonance ͑ECR͒ ion stream in a SF 6 -CF 4 -SiF 4 -O 2 gas mixture and fabricated 100 nm wide WSiN gates for ultrahigh-speed GaAs MESFETs.…”

Section: Introductionmentioning

confidence: 99%