Recombination processes in Ga1−xInxNyAs1−y/GaAs multiple quantum wells (MQWs) were investigated as function of the nitrogen molar fraction. We found a pronounced S-shaped behavior for the temperature-dependent shift of the photoluminescence emission similar to the ternary nitrides InGaN and AlGaN. This is explained by exciton localization at potential fluctuations. Time-resolved measurements at 4 K reveal an increase of the decay time with decreasing emission energy. A model based on lateral transfer processes to lower-energy states is proposed to explain this energy dependence. The formation of tail states in the Ga1−xInxNyAs1−y/GaAs MQWs is attributed to nitrogen fluctuations.

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The optical properties of InGaAsN/GaAs multiple quantum wells were investigated as a function of the nitrogen molar fraction. Time-integrated and time-resolved photoluminescence investigations demonstrate that localization effects at potential fluctuations play an important role in understanding the exciton dynamics. The results are supported by temperature-dependent photoluminescence and photoluminescence excitation investigations. In the last part, the state of the art of the 1.3 mm laser development is overviewed. #

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