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Numerical investigation on plasma and poly-Si etching uniformity control over a large area in a resonant inductively coupled plasma source Phys. Plasmas 8, 1384 (2001); 10.1063/1.1350671Mass-resolved ion energy distributions in continuous dual mode microwave/radio frequency plasmas in argon and nitrogen

Microwave ion sources have many advantages over dc-discharge ion sources, such as long lifetime and high current for most ion species. But B+ ion current has been the only disadvantage. Here we experimentally study how to get higher B+ ion current by optimizing the shape and volume of the source chamber as well as by increasing the secondary electron emissivity of the chamber wall. We carry out the experiment with regard to the maximum ion beam, lifetime, and dynamic range of the beam current for various ion species. Then, we compare the data with those of the Bernas-type ion source that has been widely used in semiconductor manufacturing factories. As a result of the improvement, the performance of all the above-mentioned aspects of the microwave ion source exceed those of the Bernas-type ion source.

We introduce the multivariable connected sum which is a generalization of Seki–Yamamoto’s connected sum and prove the fundamental identity for these sums by series manipulation. This identity yields explicit procedures for evaluating multivariable connected sums and for giving relations among special values of multiple polylogarithms. In particular, our class of relations contains Ohno’s relations for multiple polylogarithms.

We prove some weighted sum formulas for half multiple zeta values, half finite multiple zeta values, and half symmetric multiple zeta values. The key point of our proof is Dougall's identity for the generalized hypergeometric function 5F4. Similar results for interpolated refined symmetric multiple zeta values and half refined symmetric multiple zeta values are also discussed.