The relationship between average grain size on the surface of SnO 2 transparent conductive film and conversion efficiency of the a-Si:H solar cell was investigated. a-Si:H solar cells were fabricated on SnO2/glass substrates with various grain sizes.The cell structure was glass/p(SiC)-i-n/Al and the effective cell area was 4 x 10 -2cm2. The reflectivity from the glass substrate was reduced to about 7 percent with increasing the grain size from 0.1 to 0.8fim. and the short-circuit current was inceased from 12 to 14mA/cm2. A 7.9 percent of conversion efficiency was achieved using milky S n 0 2 film of 0 . 4 -~m average grain size at AM-lOOrnWicm2.T

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The microstructure of a thin SnO2 film prepared by pyrohydrolytic decomposition onto a glass substrate was studied by scanning transmission electron microscopy (STEM) and high-resolution transmission electron microscopy (HR-TEM) of cross-sectional specimens, and the findings were correlated with the low resistivity shown by this material when employed as a transparent electrode. The thin film was found to consist of three regions: a region which showed reaction with the glass substrate, a non-oriented polycrystalline region and an oriented columnar polycrystalline region showing a crystallographic shear (CS) structure which was thought to contribute to the low resistivity.