No abstract

A low-temperature electrical characterization of ultrathin oxide MOS capacitors with p + poly-Si 1−x Ge x and poly-Si gate is performed. The investigated structures are suitable for future nano-scaled high speed MOSFETs. The aim of this study is to compare the low-temperature performance of poly-Si 1−x Ge x and poly-Si gate MOS structures in the nanoscale channel length regime. Apart from the significant change in the flat band voltage, the result shows that all the poly-Si and poly-Si 1−x Ge x gated MOS structures exhibit two centres of polarity change (zero-temperature coefficients) in capacitance. The second polarity change leads to an exclusive phenomenon in these structures. The low-temperature capacitance is found to be less than high-temperature capacitance at strong accumulation and this is in contrast to what has been observed so far in metal-gated capacitors. It is also observed that the temperature dependence of the tunnelling current is only on the oxide thickness and not on the gate material used.

No abstract

No abstract

Articles you may be interested inNear infrared intersubband absorption of CdSe/MgSe quantum wells grown on InP substrate with an InAlAs buffer layer J. Vac. Sci. Technol. B 32, 02C105 (2014); 10.1116/1.4863496Study of intersubband transitions of Zn x Cd 1 − x Se ∕ Zn x ′ Cd y ′ Mg 1 − x ′ − y ′ Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications Determination of the indices of refraction of molecular-beam-epitaxy-grown ZnSe/ZnCdSe multiple-quantum-well structures J. Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substratesInvestigation of e-h pair compression in molecular beam epitaxy grown ZnCdSe/ZnSe multiquantum wells at volume excitation by electron beamThe post-growth structural stability regarding relaxation and defect propagation in Cd 0.83 Zn 0.17 Te/Cd 0.92 Zn 0.08 Te/Cd 0.83 Zn 0.17 Te quantum well ͑QW͒ heterostructures grown on ͓001͔ oriented Cd 0.88 Zn 0.12 Te substrates at 300°C by molecular beam epitaxy is investigated. The investigated heterostructures were subjected to post-growth thermal treatment in an ambient atmosphere in a temperature range between 280 and 550°C for 3 h each. We have used high-resolution x-ray diffraction as the main characterization tool. High-resolution rocking curves as well as the powerful two-dimensional reciprocal space mapping were employed in both symmetrical as well as asymmetrical reflections. The results indicate that at a post-growth temperature cycle of 350°C for 3 h slight modification of the Cd 0.83 Zn 0.17 Te/Cd 0.92 Zn 0.08 Te barrier/QW heterointerface smoothness is affected. This indicates the onset of migration of Zn atoms at this post-growth temperature time cycle. At 450°C, this effect is more pronounced and seen as the complete disappearance of thickness fringes. For higher post-growth thermal treatment at 550°C for 3 h, a high relaxation level accompanied by Zn content reduction is observed. A reduction of the Zn content down to 0.11 fractional value in the thick Cd 0.83 Zn 0.17 Te barrier is attributed to Zn out diffusion and/or Zn precipitation.