Abstract. This article discusses the process of preparation of a silicon surface for subsequent growth of dilute nitride alloys by molecular-beam epitaxy. The method of preparation of Si (100) and Si (111) substrates was developed. This method provides reproducible high-quality silicon surface for molecular-beam epitaxy of Si-GaP heterostructures. As a result, it managed to reduce the eviction oxide temperature below 800 °C, which is an important parameter for the MBE technology.

In this work, it is experimentally shown that the etching of GaN or InGaN NWs in the KOH solution allows managing the morphology and optical properties of the nanowires array. Thinning rate of GaN nanowires is 5 times slower than the rate for InGaN nanowires along semi-polar and non-polar direction for nanowires with Ga-polar crystal structure. The diameter of the InGaN NWs decreases from 200-100 to 30-40 nm. After etching process, the intensity photoluminescence (PL) of nanowires and uniformity PL signal at all sample area increase.

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