No abstract

The methane conversion into C

Pulsed dielectric-barrier discharge was used to modify polycarbonate surfaces by applying a thin film of silicone oxide. The discharge was supplied by alternating voltage pulses that lasted for about 50 ns. The generated current pulses were shorter and lasted for about 20 ns. For this reason, high power is concentrated in short time. Analysis of the composition thin film by means of the X-ray photoelectron spectroscopy method shows that it consists mainly of silicon, oxygen, and carbon. Based on the concentrations of these elements, films can be divided into three parts. In this paper, the influences of parameters characterizing the plasma reactor are attributed to a charge transferred in the single pulse of discharge, a power of discharge, and a microstructure of discharge. The influences of these parameters on deposition rate are shown.

Thin silicon oxide films were deposited on polycarbonate (PC) plates in a pulsed dielectric barrier discharge (PDBD) at atmospheric pressure and ambient temperature. The films were deposited from gas mixtures of tetraethoxysilane (TEOS), helium, and oxygen. The effects of gas composition on the deposition rate and on the surface roughness were investigated. It was shown that the oxygen concentration was the only parameter influencing the deposition rate and the roughness of the films. : 81.15.Gh, PACS

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